IEEE - Institute of Electrical and Electronics Engineers, Inc. - Highly sensitive porous PtSi/Si UV detector with high selectivity

9th IEEE Regional Symposium on Micro and Nanoelectronics (RSM 2013)

Author(s): Keramatnejad Kamran ; Khatami Saeid ; Raissi Farshid ; Khorramshahi Fatemeh
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2013
Conference Location: Langkawi, Malaysia
Conference Date: 25 September 2013
Page(s): 194 - 196
ISBN (CD): 978-1-4799-1181-3
ISBN (Electronic): 978-1-4799-1183-7
DOI: 10.1109/RSM.2013.6706506
Regular:

Novel porous structure on silicon is proposed for selective ultra violet detection with high quantum efficiency. In order to exploit the single electron effect for this goal, Pt-Si schottky... View More

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