IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dynamic self-clamping at short-circuit turn-off of high-voltage IGBTs

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Author(s): Thomas Basler ; Riteshkumar Bhojani ; Josef Lutz ; Roland Jakob
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2013
Conference Location: Kanazawa, Japan
Conference Date: 26 May 2013
Page(s): 277 - 280
ISBN (CD): 978-1-4673-5135-5
ISBN (Electronic): 978-1-4673-5136-2
ISBN (Paper): 978-1-4673-5134-8
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2013.6694440
Regular:

Measurements show that the IGBT is able to clamp the collector-emitter voltage to a certain value at short-circuit turn-off despite a very low gate turn-off resistor in combination with a high... View More

Advertisement