IEEE - Institute of Electrical and Electronics Engineers, Inc. - Suppression of threshold voltage shift for normally-Off GaN MIS-HEMT without post deposition annealing

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Author(s): M. Kanamura ; T. Ohki ; S. Ozaki ; M. Nishimori ; S. Tomabechi ; J. Kotani ; T. Miyajima ; N. Nakamura ; N. Okamoto ; T. Kikkawa ; K. Watanabe
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2013
Conference Location: Kanazawa, Japan
Conference Date: 26 May 2013
Page(s): 411 - 414
ISBN (CD): 978-1-4673-5135-5
ISBN (Electronic): 978-1-4673-5136-2
ISBN (Paper): 978-1-4673-5134-8
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2013.6694432
Regular:

In this paper, we present a method of reducing threshold voltage shift for normally-off GaN MIS-HEMT by the optimization of dielectric deposition conditions. High-temperature deposition of... View More

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