IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ultra-low specific on-resistance SOI high voltage trench LDMOS with dielectric field enhancement based on ENBULF concept

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Author(s): Wentong Zhang ; Ming Qiao ; Lijuan Wu ; Ke Ye ; Zhuo Wang ; Zhigang Wang ; Xiaorong Luo ; Sen Zhang ; Wei Su ; Bo Zhang ; Zhaoji Li
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2013
Conference Location: Kanazawa, Japan
Conference Date: 26 May 2013
Page(s): 329 - 332
ISBN (CD): 978-1-4673-5135-5
ISBN (Electronic): 978-1-4673-5136-2
ISBN (Paper): 978-1-4673-5134-8
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2013.6694415
Regular:

An ultra-low specific on-resistance (Ron, sp) high voltage trench SOI LDMOS based on the enhanced bulk field (ENBULF) concept is proposed. The key feature of this new device is heavily... View More

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