IEEE - Institute of Electrical and Electronics Engineers, Inc. - A low noise and low loss power MOSFET with low Vth regions for voltage regulators

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Author(s): Masahiro Masunaga ; Takayuki Hashimoto ; Kouichi Kato ; Hiroki Andou ; Hideo Numabe ; Zen Tomizawa ; Nobuyoshi Matsuura
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2013
Conference Location: Kanazawa, Japan
Conference Date: 26 May 2013
Page(s): 91 - 94
ISBN (CD): 978-1-4673-5135-5
ISBN (Electronic): 978-1-4673-5136-2
ISBN (Paper): 978-1-4673-5134-8
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2013.6694404
Regular:

A novel low voltage power MOSFET with a low threshold voltage (Vth) region (sub-MOS) is proposed. The proposed MOSFET has a superior trade-off relationship between output efficiency and switching... View More

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