IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low voltage MOSFET optimized for low V DS transient voltages

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Author(s): P. Rutter ; S. Peake ; A. Elford
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2013
Conference Location: Kanazawa, Japan
Conference Date: 26 May 2013
Page(s): 83 - 86
ISBN (CD): 978-1-4673-5135-5
ISBN (Electronic): 978-1-4673-5136-2
ISBN (Paper): 978-1-4673-5134-8
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2013.6694402
Regular:

A 30V power MOSFET technology, employing a low voltage superjunction approach, has been optimized for operation as a low-side switch in a DC-DC buck converter. In particular, this technology has... View More

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