IEEE - Institute of Electrical and Electronics Engineers, Inc. - Injection control technique for high speed switching with a double gate PNM-IGBT

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Author(s): Masakiyo Sumitomo ; Hiroki Sakane ; Kazuki Arakawa ; Yasushi Higuchi ; Masaki Matsui
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2013
Conference Location: Kanazawa, Japan
Conference Date: 26 May 2013
Page(s): 33 - 36
ISBN (CD): 978-1-4673-5135-5
ISBN (Electronic): 978-1-4673-5136-2
ISBN (Paper): 978-1-4673-5134-8
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2013.6694392
Regular:

We proposed a PNM-IGBT [1] that can realize performance close to the theoretical limit shown by Nakagawa, et, al [2, 3]. In that work, we confirmed PNM-IGBT can achieve a very low saturation... View More

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