IEEE - Institute of Electrical and Electronics Engineers, Inc. - An embedded flash macro with sub-4ns random-read-access using asymmetric-voltage-biased current-mode sensing scheme

2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)

Author(s): Yen-Chen Liu ; Meng-Fan Chang ; Yu-Fan Lin ; Jui-Jen Wu ; Che-Ju Yeh ; Shin-Jang Shen ; Ping-Cheng Chen ; Wu-Chin Tsai ; Yu-Der Chih ; Sreedhar Natarajan
Sponsor(s): IEEE Solid-State Circuits Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2013
Conference Location: Singapore, Singapore
Conference Date: 11 November 2013
Page(s): 241 - 244
ISBN (Electronic): 978-1-4799-0280-4
ISBN (Paper): 978-1-4799-0277-4
DOI: 10.1109/ASSCC.2013.6691027
Regular:

High-performance mobile chips and MCUs require large-capacity and fast-read embedded nonvolatile/Flash memory (eNVM/eFlash) for code and data storage. Current-mode sense amplifiers (CSA) are... View More

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