IEEE - Institute of Electrical and Electronics Engineers, Inc. - Highly robust and sensitive charge transfer sense amplifier for ultra-low voltage DRAMs

2013 5th Asia Symposium on Quality Electronic Design (ASQED)

Author(s): Choongkeun Lee ; Hongil Yoon
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2013
Conference Location: Penang, Malaysia
Conference Date: 26 August 2013
Page(s): 227 - 232
ISBN (CD): 978-1-4799-1312-1
ISBN (Electronic): 978-1-4799-1314-5
DOI: 10.1109/ASQED.2013.6643592
Regular:

A new charge transfer sense amplifier for low voltage DRAMs is proposed. The proposed charge transfer sense amplifier has two features. One is the double boosting sensing node structure, and the... View More

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