IEEE - Institute of Electrical and Electronics Engineers, Inc. - Strain modeling in source exhaustion regime of Carbon nanotube field effect transistor

2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

Author(s): Zubair Ahmed ; Mansun Chan
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2013
Conference Location: Hong Kong, China
Conference Date: 3 June 2013
Page(s): 1 - 2
ISBN (Electronic): 978-1-4673-2523-3
DOI: 10.1109/EDSSC.2013.6628235
Regular:

Strain incorporated surface potential based compact model for Carbon Nanotube field effect transistor (CNTFET) is presented in this paper. The model is first of its kind and confers strain... View More

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