IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication of strained Si 0.55 Ge 0.45 channel PMOSFETs directly on a Si substrate

2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

Author(s): Tiexiang Zhao ; Rengrong Liang ; Zhen Tan ; Jing Wang ; Jun Xu
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2013
Conference Location: Hong Kong, China
Conference Date: 3 June 2013
Page(s): 1 - 2
ISBN (Electronic): 978-1-4673-2523-3
DOI: 10.1109/EDSSC.2013.6628230
Regular:

Biaxial strained Si0.55Ge0.45 channel pMOSFETs were fabricated using a process compatible with traditional bulk Si CMOS devices. The thermal budget was carefully controlled... View More

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