IEEE - Institute of Electrical and Electronics Engineers, Inc. - A low operating voltage IGZO TFT using LaLuO 3 gate dielectric

2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

Author(s): Kun-I Chou ; Hsiao-Hsuan Hsu ; Chun-Hu Cheng ; Kai-Yu Lee ; Shang-Rong Li ; Albert Chin
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2013
Conference Location: Hong Kong, China
Conference Date: 3 June 2013
Page(s): 1 - 2
ISBN (Electronic): 978-1-4673-2523-3
DOI: 10.1109/EDSSC.2013.6628219
Regular:

This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-κ lanthanum-lutetium oxide as the gate dielectric. It is the first time to... View More

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