IEEE - Institute of Electrical and Electronics Engineers, Inc. - Flexible InGaZnO TFTs with stacked GeO 2 /TiO 2 gate dielectrics

2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

Author(s): Hsiao-Hsuan Hsu ; Chun-Yen Chang ; Chun-Hu Cheng ; Shu-Hung Yu ; Ching-Yuan Su
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2013
Conference Location: Hong Kong, China
Conference Date: 3 June 2013
Page(s): 1 - 2
ISBN (Electronic): 978-1-4673-2523-3
DOI: 10.1109/EDSSC.2013.6628218
Regular:

We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold... View More

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