IEEE - Institute of Electrical and Electronics Engineers, Inc. - Sensitivity enhancement of ion sensors by charge trapping on Extended Gate Field Effect Transistors

2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

Author(s): K. I. Ho ; C. H. Chen ; C. F. Lu ; Chao-Sung Lai ; Chun Chang ; An-thung Cho ; J.-J Chang ; M. F. Chiang
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2013
Conference Location: Hong Kong, China
Conference Date: 3 June 2013
Page(s): 1 - 3
ISBN (Electronic): 978-1-4673-2523-3
DOI: 10.1109/EDSSC.2013.6628174
Regular:

Electrolyte-insulator-semiconductor (EIS) and Extended-gate Field Effect Transistor (EGFET) devices with programmable HfO2/Si3N4/SiO2 structures... View More

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