IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric

2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

Author(s): C. Y. Han ; C. H. Leung ; P. T. Lai ; W. M. Tang ; C. M. Che
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2013
Conference Location: Hong Kong, China
Conference Date: 3 June 2013
Page(s): 1 - 2
ISBN (Electronic): 978-1-4673-2523-3
DOI: 10.1109/EDSSC.2013.6628118
Regular:

Pentacene organic thin-film transistor (OTFT) with high-κ HfTiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have... View More

Advertisement