IEEE - Institute of Electrical and Electronics Engineers, Inc. - RTN analysis with FHMM as a tool for multi-trap characterization in HfO X RRAM

2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

Author(s): Francesco Maria Puglisi ; Paolo Pavan
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2013
Conference Location: Hong Kong, China
Conference Date: 3 June 2013
Page(s): 1 - 2
ISBN (Electronic): 978-1-4673-2523-3
DOI: 10.1109/EDSSC.2013.6628059
Regular:

This paper presents a new technique to analyze the characteristics of multi-level random telegraph noise (RTN) in HfOX RRAM. RTN is characterized by abrupt switching of either the... View More

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