IEEE - Institute of Electrical and Electronics Engineers, Inc. - Substrate bias effects on noise and minority carrier lifetime in SOI MOSFET single-photon detector

2013 International Conference on QiR (Quality in Research)

Author(s): Dedy Septono Catur Putranto ; Hiroaki Satoh ; Atsushi Ono ; Hiroshi Inokawa ; Purnomo Sidi Priambodo ; Djoko Hartanto ; Wei Du
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2013
Conference Location: Yogyakarta, Indonesia
Conference Date: 25 June 2013
Page(s): 27 - 30
ISBN (CD): 978-1-4673-5784-5
ISBN (Electronic): 978-1-4673-5785-2
DOI: 10.1109/QiR.2013.6632529
Regular:

Operation speed of the single-photon detector based on the silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) is affected by the noise and minority... View More

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