IEEE - Institute of Electrical and Electronics Engineers, Inc. - A compact charge-based physical model for AlGaN/GaN HEMTs

2013 IEEE Topical Conference on Biomedical Wireless Technologies, Networks and Sensing Systems (BioWireleSS)

Author(s): F. M. Yigletu ; B. Iniguez ; S. Khandelwal ; T. A. Fjeldly
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2013
Conference Location: Austin, TX, USA
Conference Date: 20 January 2013
Page(s): 97 - 99
ISBN (CD): 978-1-4673-2930-9
ISBN (Electronic): 978-1-4673-2958-3
DOI: 10.1109/BioWireleSS.2013.6613687
Regular:

This work presents a physical compact model for AlGaN/GaN HEMT devices. An analytical model of the drain current has been developed based on models of the charge density in the 2DEG channel but... View More

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