IEEE - Institute of Electrical and Electronics Engineers, Inc. - Simulation of deep submicron SOI N-MOSFET considering the velocity overshoot effect

Author(s): Woo-Sung Choi ; F. Assaderaghi ; Young-June Park ; Hong-Shick Min ; Chenming Hu ; R.W. Dutton
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 1995
Volume: 16
Page Count: 3
Page(s): 333 - 335
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.388725
Regular:

A set of numerical simulations were performed on 0.22 /spl mu/m SOI MOSFET's with relatively uniform channel field and charge using the hydrodynamic model, the energy transport model, and the... View More

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