IEEE - Institute of Electrical and Electronics Engineers, Inc. - Picosecond-switching time of In/sub 0.53/Ga/sub 0.47/As/AlAs resonant-tunneling diodes measured by electro-optic sampling technique

Author(s): N. Shimizu ; T. Nagatsuma ; M. Shinagawa ; T. Waho
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 1995
Volume: 16
Page Count: 3
Page(s): 262 - 264
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.790729
Regular:

To demonstrate picosecond-switching time for In/sub 0.53/Ga/sub 0.47/As/AlAs resonant-tunneling diodes (RTD's), we fabricated RTD's with various barrier widths and measured their switching... View More

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