IEEE - Institute of Electrical and Electronics Engineers, Inc. - Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors

Author(s): B. Brar ; H. Kroemer
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1995
Volume: 16
Page Count: 3
Page(s): 548 - 550
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.475583
Regular:

Using an InAs-AlSb heterostructure field-effect transistor (HFT) structure modified to incorporate an epitaxial p-type GaSb back gate, we measure the impact ionization current caused by hot... View More

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