IEEE - Institute of Electrical and Electronics Engineers, Inc. - Finite element analysis of SiGe heterojunction devices

Author(s): G.H.R. Krishna ; A.K. Aditya ; N.B. Chakrabarti ; S. Banerjee
Sponsor(s): IEEE Council on Electronic Design Automation
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 1995
Volume: 14
Page Count: 12
Page(s): 803 - 814
ISSN (Paper): 0278-0070
ISSN (Online): 1937-4151
DOI: 10.1109/43.391728
Regular:

Two SiGe devices, a n/sup +/-n-p heterojunction diode and an n-p-n HBT have been analyzed using a two-dimensional bipolar device simulator which is based on the finite element method. The various... View More

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