IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dose rate and total dose dependence of the 1/f noise performance of a GaAs operational amplifier during irradiation

Author(s): D.M. Hiemstra
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1995
Volume: 42
Page Count: 7
Page(s): 1,615 - 1,621
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/23.488757
Regular:

Dose rate and total dose dependence of the 1/f noise performance of a custom GaAs MESFET operational amplifier during irradiation are presented. Dose rate dependent 1/f noise degradation during... View More

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