IEEE - Institute of Electrical and Electronics Engineers, Inc. - Charge collection in GaAs MESFETs fabricated in semi-insulating substrates

Author(s): J.R. Schwank ; F.W. Sexton ; T.R. Weatherford ; D. McMorrow ; A.R. Knudson ; J.S. Melinger
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1995
Volume: 42
Page Count: 7
Page(s): 1,585 - 1,591
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/23.488753
Regular:

Charge-collection in GaAs MESFETs fabricated in semi-insulating substrates is investigated. Current transients are measured at short times (/spl sim/few picoseconds) after either an alpha-particle... View More

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