IEEE - Institute of Electrical and Electronics Engineers, Inc. - Two-dimensional analysis of a test structure for lifetime profile measurements

Author(s): S. Daliento ; N. Rinaldi ; A. Sanseverino ; P. Spirito
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 1995
Volume: 42
Page Count: 5
Page(s): 1,924 - 1,928
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.469398
Regular:

A new electrical measurement technique has been proposed that allows one to obtain the "local" lifetime value in Si layers, by superposing ac measurements on a dc bias in a three-terminal test... View More

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