IEEE - Institute of Electrical and Electronics Engineers, Inc. - Threshold current of 670-nm AlGaInP strained quantum well lasers

Author(s): P.M. Smowton ; H.D. Summers ; P. Rees ; P. Blood
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 1994
Volume: 6
Page(s): 910 - 912
ISSN (Electronic): 1941-0174
ISSN (Paper): 1041-1135
DOI: 10.1109/68.313049
Regular:

By means of gain-current calculations we have examined the factors which determine the threshold current of compressively strained Ga/sub x/In/sub 1-x/P/AlGaInP quantum well lasers for the various... View More

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