IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 μm

Author(s): H.K. Choi ; G.W. Turner ; S.J. Eglash
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1994
Volume: 6
Page(s): 7 - 9
ISSN (Electronic): 1941-0174
ISSN (Paper): 1041-1135
DOI: 10.1109/68.265873
Regular:

High-power diode lasers emitting at /spl sim/1.9 μm have been fabricated from a quantum-well heterostructure having an active region consisting of five GaInAsSb wells and six AlGaAsSb... View More

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