IEEE - Institute of Electrical and Electronics Engineers, Inc. - Measurement of the electron ionization coefficient at low electric fields in GaAs-based heterojunction bipolar transistors

Author(s): C. Canali ; F. Capasso ; R. Malik ; A. Neviani ; P. Pavan ; C. Tedesco ; E. Zanoni
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1994
Volume: 15
Page Count: 3
Page(s): 354 - 356
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.311132
Regular:

Values of the electron ionization coefficient /spl alpha//sub n/ in <100> GaAs extending the previously available data by two orders of magnitude, down to 1 cm/sup -1/, are presented. The... View More

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