IEEE - Institute of Electrical and Electronics Engineers, Inc. - An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology

Author(s): K. Suma ; T. Tsuruda ; H. Hidaka ; T. Eimori ; T. Oashi ; Y. Yamaguchi ; T. Iwamatsu ; M. Hirose ; F. Morishita ; K. Arimoto ; K. Fujishima ; Y. Inoue ; T. Nishimura ; T. Yoshihara
Sponsor(s): IEEE Solid-State Circuits Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 1994
Volume: 29
Page Count: 7
Page(s): 1,323 - 1,329
ISSN (Paper): 0018-9200
ISSN (Online): 1558-173X
DOI: 10.1109/4.328631
Regular:

An SOI-DRAM test device (64-Kb scale) with 100-nm-thick SOI film has been fabricated in 0.5-/spl mu/m CMOS/SIMOX technology and the basic DRAM function has been successfully observed. A partially... View More

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