IEEE - Institute of Electrical and Electronics Engineers, Inc. - Implications of the spatial dependence of the single-event-upset threshold in SRAMs measured with a pulsed laser

Author(s): S. Buchner ; J.B. Langworthy ; W.J. Stapor ; A.B. Campbell ; S. Rivet
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1994
Volume: 41
Page Count: 8
Page(s): 2,195 - 2,202
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/23.340562
Regular:

Pulsed laser light was used to measure single event upset (SEU) thresholds for a large number of memory cells in both CMOS and bipolar SRAMs. Results showed that small variations in intercell... View More

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