IEEE - Institute of Electrical and Electronics Engineers, Inc. - An improved analytical model for collector currents in lateral bipolar transistors

Author(s): K. Joardar
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 1994
Volume: 41
Page Count: 10
Page(s): 373 - 382
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.275223
Regular:

Detailed analyses of the lateral bipolar transistor have been performed and a physically based model for the collector current developed. Hybrid mode operation of the lateral BJT in the presence... View More

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