IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrical Characterization of P-Ge1-xSnx/P-Ge and P-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)

Author(s): Baert, B. ; Truong, D.Y.N. ; Nakatsuka, O. ; Zaima, S. ; Ngoc Duy Nguyen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2012
Conference Location: Berkeley, CA, USA, USA
Conference Date: 4 June 2012
Page(s): 1 - 2
ISBN (Electronic): 978-1-4577-1865-6
ISBN (Paper): 978-1-4577-1864-9
ISBN (Online): 978-1-4577-1863-2
DOI: 10.1109/ISTDM.2012.6222503
Regular:

The group IV semiconductor alloy germanium tin (Ge1-xSnx) is an attractive material for next-generation devices in nanoelectronics. The strain resulting from the lattice mismatch between an... View More

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