IEEE - Institute of Electrical and Electronics Engineers, Inc. - Material Properties and Applications of Ge1-xSnx Alloys for Ge Nanoelectronics

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)

Author(s): Nakatsuka, O. ; Shimura, Y. ; Takeuchi, W. ; Taoka, N. ; Zaima, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2012
Conference Location: Berkeley, CA, USA, USA
Conference Date: 4 June 2012
Page(s): 1 - 2
ISBN (Electronic): 978-1-4577-1865-6
ISBN (Paper): 978-1-4577-1864-9
ISBN (Online): 978-1-4577-1863-2
DOI: 10.1109/ISTDM.2012.6222485
Regular:

Ge1-xSnx alloy provides a new aspect into the growth, strain, electronic, and energy band engineering technology. The future prospect of Ge1-xSnx... View More

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