IEEE - Institute of Electrical and Electronics Engineers, Inc. - 20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage

Author(s): F. Devaux ; F. Dorgeuille ; A. Ougazzaden ; F. Huet ; M. Carre ; A. Carenco ; M. Henry ; Y. Sorel ; J.-F. Kerdiles ; E. Jeanney
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 1993
Volume: 5
Page(s): 1,288 - 1,290
ISSN (Electronic): 1941-0174
ISSN (Paper): 1041-1135
DOI: 10.1109/68.250046
Regular:

The authors have fabricated a ridge waveguide electroabsorption modulator based on the quantum-confined Stark effect in InGaAsP/InGaAsP multiple quantum wells. The drive voltage for 12-dB... View More

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