IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low-threshold lasers fabricated by alignment-free impurity induced disordering

Author(s): P.D. Floyd ; C.P. Chao ; K.-K. Law ; J.L. Merz
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 1993
Volume: 5
Page(s): 1,261 - 1,263
ISSN (Electronic): 1941-0174
ISSN (Paper): 1041-1135
DOI: 10.1109/68.250038
Regular:

An Si/SiN/sub x//Si trilayer diffusion source and mask is described and applied to an alignment-free process for fabricating lasers by impurity-induced disordering (IID). Edge-emitting lasers with... View More

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