IEEE - Institute of Electrical and Electronics Engineers, Inc. - A double-recessed Al/sub 0.24/GaAs/In/sub 0.16/GaAs pseudomorphic HEMT for Ka- and Q-band power applications

Author(s): J.C. Huang ; P. Saledas ; J. Wendler ; A. Platzker ; W. Boulais ; S. Shanfield ; W. Hoke ; P. Lyman ; L. Aucoin ; A. Miquelarena ; C. Bedard ; D. Atwood
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1993
Volume: 14
Page Count: 3
Page(s): 456 - 458
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.244708
Regular:

A double-recessed 0.2- mu m-gate-length pseudomorphic HEMT (PHEMT) has been demonstrated with 500 mW of output power (833 mW/mm of gate periphery), 6-dB gain, and 35% power-added efficiency (PAE)... View More

Advertisement