IEEE - Institute of Electrical and Electronics Engineers, Inc. - HIM0S-a high efficiency flash E/sup 2/PROM cell for embedded memory applications

Author(s): J. Van Houdt ; L. Haspeslagh ; D. Wellekens ; L. Deferm ; G. Groeseneken ; H.E. Maes
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1993
Volume: 40
Page Count: 9
Page(s): 2,255 - 2,263
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.249473
Regular:

A flash E/sup 2/PROM device which is programmed with a highly efficient hot-electron injection mechanism is described. This high-injection MOS (HIMOS) device combines a very high programming speed... View More

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