IEEE - Institute of Electrical and Electronics Engineers, Inc. - Bandgap narrowing and emitter efficiency in heavily doped emitter structures revisited

Author(s): C.M. Van Vliet
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 1993
Volume: 40
Page Count: 8
Page(s): 1,140 - 1,147
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.214741
Regular:

The developments of heavy doping effects and of bandgap narrowing (BGN) concepts during the last two decades are critically discussed. The differences between the real bandgap reduction Delta... View More

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