IEEE - Institute of Electrical and Electronics Engineers, Inc. - Numerical simulation of sidegating effect in GaAs MESFET's

Author(s): S.-J. Chang ; C.-P. Lee
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1993
Volume: 40
Page Count: 7
Page(s): 698 - 704
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.202780
Regular:

Two-dimensional simulation of the sidegating effect in GaAs MESFETs has been performed. The result confirms that Schottky contacts on a semi-insulating substrate cause serious high substrate... View More

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