IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications

Author(s): C.E. Chang ; P.M. Asbeck ; K.-C. Wang ; E.R. Brown
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1993
Volume: 40
Page Count: 7
Page(s): 685 - 691
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.202778
Regular:

A high-speed digital logic family based on heterojunction bipolar transistors (HBTs) and resonant tunneling diodes (RTDs) is proposed. The negative differential resistance of RTDs is used to... View More

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