IEEE - Institute of Electrical and Electronics Engineers, Inc. - Aging analysis of nMOS of a 1.3- mu m partially depleted SIMOX SOI technology comparison with a 1.3- mu m bulk technology

Author(s): G. Reimbold ; A.-J. Auberton-Herve
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 1993
Volume: 40
Page Count: 7
Page(s): 364 - 370
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.182515
Regular:

Hot carrier degradation of nMOS of a 1.3- mu m partially depleted rad-hard SOI CMOS technology is analyzed in detail. The relative importances of the maximum electric field, the localization of... View More

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