IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation of reliability issue in tunneling and inter-poly dielectrics in floating gate NAND flash memory cell strings

2011 IEEE 4th International Nanoelectronics Conference (INEC)

Author(s): Jong-Ho Lee ; Sung-Min Joe
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Tao-Yuan, Taiwan, Taiwan
Conference Date: 21 June 2011
Page(s): 1 - 2
ISBN (Electronic): 978-1-4577-0378-2
ISBN (Paper): 978-1-4577-0379-9
ISBN (Online): 978-1-4577-0377-5
ISSN (Electronic): 2159-3531
ISSN (Paper): 2159-3523
ISSN (Online): 2159-3523
DOI: 10.1109/INEC.2011.5991803
Regular:

Recently, random telegraph noise (RTN) caused by electrons capture/emission at traps and the reliability of IPD Layer in NAND flash memory cells become important issues as the size of flash memory... View More

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