IEEE - Institute of Electrical and Electronics Engineers, Inc. - Resistive switching characteristics of zinc oxide (ZnO) resistive RAM with Al metal electrode

2011 IEEE 4th International Nanoelectronics Conference (INEC)

Author(s): Cheng-Li Lin ; Chi-Chang Tang ; Shu-Ching Wu ; Syuan-Ren Yang ; Yi-Hsiu Lai ; Shich-Chuan Wu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Tao-Yuan, Taiwan, Taiwan
Conference Date: 21 June 2011
Page(s): 1 - 2
ISBN (Electronic): 978-1-4577-0378-2
ISBN (Paper): 978-1-4577-0379-9
ISBN (Online): 978-1-4577-0377-5
ISSN (Electronic): 2159-3531
ISSN (Paper): 2159-3523
ISSN (Online): 2159-3523
DOI: 10.1109/INEC.2011.5991798
Regular:

This work investigates the characteristics of ZnO film as resistive RAM (RRAM) using Al electrode. Effects of oxygen composition in ZnO film is also studied using different Ar/O2 gas flow ratio.... View More

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