IEEE - Institute of Electrical and Electronics Engineers, Inc. - Cation-based resistive memory

2011 IEEE 4th International Nanoelectronics Conference (INEC)

Author(s): Kozicki, M.N.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Tao-Yuan, Taiwan, Taiwan
Conference Date: 21 June 2011
Page(s): 1 - 3
ISBN (Electronic): 978-1-4577-0378-2
ISBN (Paper): 978-1-4577-0379-9
ISBN (Online): 978-1-4577-0377-5
ISSN (Electronic): 2159-3531
ISSN (Paper): 2159-3523
ISSN (Online): 2159-3523
DOI: 10.1109/INEC.2011.5991737
Regular:

This paper describes cation-based resistive memory, which utilizes a high resistance silver- or copper-containing oxide or higher chalcogenide electrolyte sandwiched between oxidizable and inert... View More

Advertisement