IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of growth parameters on surface morphology evolution of MOMBE-grown InN

2011 IEEE 4th International Nanoelectronics Conference (INEC)

Author(s): Shou-Yi Kuo ; Wei-Chun Chen ; Fang-I Lai ; Woei-Tyng Lin ; Chien-Nan Hsiao
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Tao-Yuan, Taiwan, Taiwan
Conference Date: 21 June 2011
Page(s): 1 - 2
ISBN (Electronic): 978-1-4577-0378-2
ISBN (Paper): 978-1-4577-0379-9
ISBN (Online): 978-1-4577-0377-5
ISSN (Electronic): 2159-3531
ISSN (Paper): 2159-3523
ISSN (Online): 2159-3523
DOI: 10.1109/INEC.2011.5991696
Regular:

This work reports on the effects of growth temperature, TMIn flow rate and AlN buffer on InN thin films grown by RF-MOMBE epitaxy system. Structural and surface morphology were analyzed by XRD,... View More

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