IEEE - Institute of Electrical and Electronics Engineers, Inc. - The influence of physical and electrical properties in HfO 2 thin film with different lanthanum doping position

2011 IEEE 4th International Nanoelectronics Conference (INEC)

Author(s): Juan, P.C. ; Chien, Y.S. ; Lin, J.Y. ; Cheng, C.P. ; Liu, C.H. ; Hsu, H.W. ; Chen, H.W. ; Huang, H.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Tao-Yuan, Taiwan, Taiwan
Conference Date: 21 June 2011
Page(s): 1 - 2
ISBN (Electronic): 978-1-4577-0378-2
ISBN (Paper): 978-1-4577-0379-9
ISBN (Online): 978-1-4577-0377-5
ISSN (Electronic): 2159-3531
ISSN (Paper): 2159-3523
ISSN (Online): 2159-3523
DOI: 10.1109/INEC.2011.5991692
Regular:

In this paper, La-incorporated with HfO2 thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that... View More

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