IEEE - Institute of Electrical and Electronics Engineers, Inc. - An observation of charge trapping phenomena in GaN/AlGaN/Gd 2 O 3 MOS schottky structure

2011 IEEE 4th International Nanoelectronics Conference (INEC)

Author(s): Das, A. ; Liann Be Chang ; Lin, R.M. ; Maikap, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Tao-Yuan, Taiwan, Taiwan
Conference Date: 21 June 2011
Page(s): 1 - 2
ISBN (Electronic): 978-1-4577-0378-2
ISBN (Paper): 978-1-4577-0379-9
ISBN (Online): 978-1-4577-0377-5
ISSN (Electronic): 2159-3531
ISSN (Paper): 2159-3523
ISSN (Online): 2159-3523
DOI: 10.1109/INEC.2011.5991688
Regular:

Charge trapping specially electron trapping phenomenon is observed in GaN/AlGaN/Gd2O3 MOS schottky structure for first time. Under positive pulse programming, a significant hysteresis window is... View More

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