IEEE - Institute of Electrical and Electronics Engineers, Inc. - Interface characterization of epitaxial GaAs on Ge(001) substrates with high-k dielectrics for nanoscale CMOS

2011 IEEE 4th International Nanoelectronics Conference (INEC)

Author(s): Wong, T.K.S. ; Li, Y. ; Dalapati, G. ; Kumar, M.K. ; Chia, C.K. ; Gao, H. ; Wang, B.Z. ; Chi, D.Z.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Tao-Yuan, Taiwan, Taiwan
Conference Date: 21 June 2011
Page(s): 1 - 2
ISBN (Electronic): 978-1-4577-0378-2
ISBN (Paper): 978-1-4577-0379-9
ISBN (Online): 978-1-4577-0377-5
ISSN (Electronic): 2159-3531
ISSN (Paper): 2159-3523
ISSN (Online): 2159-3523
DOI: 10.1109/INEC.2011.5991654
Regular:

Zn: GaAs and undoped GaAs were grown by metalorganic chemical vapor deposition (MOCVD) at reduced temperature on Ge (001) substrates. High-k ZrO2 layers were deposited by radio frequency (RF)... View More

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