IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrical characterization of silicon nanowire p-i-n diodes arrays with varying diameters

2011 IEEE 4th International Nanoelectronics Conference (INEC)

Author(s): Yongshun Sun ; Mingbin Yu ; Rusli
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Tao-Yuan, Taiwan
Conference Date: 21 June 2011
Page(s): 1 - 2
ISBN (Electronic): 978-1-4577-0378-2
ISBN (Paper): 978-1-4577-0379-9
ISBN (Online): 978-1-4577-0377-5
ISSN (Electronic): 2159-3531
ISSN (Paper): 2159-3523
ISSN (Online): 2159-3523
DOI: 10.1109/INEC.2011.5991625
Regular:

Silicon based p-i-n diodes arrays with varying diameters were fabricated on SOI wafer using CMOS compatible top-down approach. Each array comprises 500 identical Si nanowires (SiNWs) in parallel.... View More

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