IEEE - Institute of Electrical and Electronics Engineers, Inc. - Realization of InGaN solar cells with InGaN/GaN superlattice absorption layers by metalorganic vapor phase epitaxy (MOVPE)

2011 IEEE 4th International Nanoelectronics Conference (INEC)

Author(s): Chia-Lung Tsai ; Zhong-Fan Xu ; Yu-Sheng Lee ; Gong-Cheng Fan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Tao-Yuan, Taiwan, Taiwan
Conference Date: 21 June 2011
Page(s): 1 - 2
ISBN (Electronic): 978-1-4577-0378-2
ISBN (Paper): 978-1-4577-0379-9
ISBN (Online): 978-1-4577-0377-5
ISSN (Electronic): 2159-3531
ISSN (Paper): 2159-3523
ISSN (Online): 2159-3523
DOI: 10.1109/INEC.2011.5991623
Regular:

In this study, we report on the realization of InGaN solar cells with InGaN/GaN superlattice (SL) absorption layers by low-pressure metalorganic vapor phase epitaxy (MOVPE). High-resolution X-ray... View More

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